1  Introduction
2  Charge Carrier Transport
 2.1  Band structure
 2.2  The Boltzmann Transport Equation
  2.2.1  Scattering
  2.2.2  Recombination and Generation
 2.3  The Method of Moments
  2.3.1  The Drift Diffusion Model
  2.3.2  The Hydrodynamic Model
  2.3.3  Higher Order Models
 2.4  The Monte Carlo Method
 2.5  The Spherical Harmonics Expansion Method
 2.6  Quantum Mechanical Effects - Confinement
 2.7  Non-Equilibrium Greens Functions Approach
3  Spherical Harmonics Expansion
 3.1  Theory
  3.1.1  Expansion of the Free-Streaming Operator
  3.1.2  Expansion of the Scattering-Streaming Operator
 3.2  The H-Transform
 3.3  Discretization
 3.4  Full-band Effects
  3.4.1  The Anisotropic Band Model
  3.4.2  The extended Vecchi Model
 3.5  Recombination and Generation
 3.6  Time-dependent SHE of the BTE
  3.6.1  Comparison to Drift Diffusion
  3.6.2  Stability
  3.6.3  Energy Grid Interpolation
  3.6.4  Probable Violation of Gauss’ Law
  3.6.5  The Shockley-Haynes Experiment
4  Quantum Correction Methods
 4.1  The Density Gradient Model
 4.2  The First-Order Quantum Corrected Drift Diffusion Model
 4.3  The First-Oder Quantum Corrected SHE of the BTE
 4.4  Discretization
  4.4.1  The Simple Scheme
  4.4.2  The Full Scheme
 4.5  Boundary Conditions
 4.6  Calibration
  4.6.1  Calibration for the Drift Diffusion Model
  4.6.2  Calibration for a SHE of the BTE
5  Variability
 5.1  Random Discrete Dopands
  5.1.1  Random Discrete Dopands Algorithm
  5.1.2  Screening Charges
  5.1.3  Simulation Results using the Drift Diffusion Model
 5.2  Random Discrete Traps
  5.2.1  Single Trap
  5.2.2  Multiple Traps
  5.2.3  Mobility
 5.3  Random Discrete Doping and a SHE of the BTE
6  Bias Temperature Instability
 6.1  Measurement Techniques
  6.1.1  Measure Stress Measure Technique
  6.1.2  On-the-Fly Technique
  6.1.3  Direct Current Current Voltage
  6.1.4  Time Dependent Defect Spectroscopy
 6.2  Models for the Bias Temperature Instability
  6.2.1  Phenomenological Models
  6.2.2  Non-radiative Multiphonon Transitions
  6.2.3  Structural Relaxation
  6.2.4  The four State NMP Model
 6.3  Implementation and Requirements
  6.3.1  Self-Consistent Solutions
  6.3.2  Parameter Dispersion
  6.3.3  Suitable Transport Models
 6.4  Model Evaluation on pMOSFETs using the Direct Current Current Voltage Method
  6.4.1  Experimental Setup
  6.4.2  Comparison of SRH and the four State NMP Model
 6.5  Results on Trap-Assisted Tunneling
7  Hot Carrier Degradation
 7.1  Measurement Technique
 7.2  Electric Field Dependence
 7.3  Temperature Dependence
 7.4  Channel Length Dependence
 7.5  Models
  7.5.1  Early Models
  7.5.2  Latest Model
 7.6  Requirements for Simulation
  7.6.1  Importance of the High Energy Tail
 7.7  Calibration
  7.7.1  Experiment
  7.7.2  Results
  7.7.3  Importance of Electron-Electron Scattering
8  Conclusions
9  Outlook