Own Publications

[1] Ceric, H., Lacerda de Orio, R., Zisser, W. H., and Selberherr, S. Microstructural Impact on Electromigration: A TCAD Study. Facta universitatis - series: Electronics and Energetics 27, 1 (2014), 1-11.

[2] Ceric, H., Lacerda de Orio, R., Schanovsky, F., Zisser, W. H., and Selberherr, S. Multilevel Simulation for the Investigation of Fast Diffusivity Paths. In Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2011), pp. 135-138.

[3] Ceric, H., Lacerda de Orio, R., Zisser, W. H., Schnitzer, V., and Selberherr, S. Modeling of Microstructural Effects on Electromigration Failure. In Abstracts of the 12th International Workshop on Stress-Induced Phenomena in Microelectronics (2012), pp. 50-51.

[4] Ceric, H., Lacerda de Orio, R., Zisser, W. H., and Selberherr, S. Ab Initio Method for Electromigration Analysis. In Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (2012), pp. 1-4.

[5] Ceric, H., Zisser, W. H., Rovitto, M., and Selberherr, S. Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study. In Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2014), pp. 221-224.

[6] Ceric, H., Zisser, W. H., and Selberherr, S. Quantum Mechanical Calculations of Electromigration Characteristics. In Abstracts of the 13th International Workshop on Stress-Induced Phenomena in Microelectronics (2014), p. 16.

[7] Marti, G., Zisser, W. H., Arnaud, L., and Wouters, Y. Electromigration: Multiphysics Model and Experimental Calibration. In Proceedings of the 2016 IEEE International Reliability Physics Symposium (IRPS) (2016), in print.

[8] Papaleo, S., Zisser, W. H., and Ceric, H. Factors that Influence Delamination at the Bottom of Open TSVs. In Proceedings of the 20th International Con- ference on Simulation of Semiconductor Processes and Devices (SISPAD) (2015), pp. 421-424.

[9] Papaleo, S., Zisser, W. H., and Ceric, H. Effects of the Initial Stress at the Bottom of Open TSVs. In Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (2015), p. P7-4.

[10] Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., and Selberherr, S. Stress Analysis in Open TSVs after Nanoindentation. In Abstracts of the GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects (2014), pp. 39- 40.

[11] Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., and Selberherr, S. Stress Evolution During the Nanoindentation in Open TSVs. In Abstracts of the 13th International Workshop on Stress-Induced Phenomena in Microelectronics (2014), p. 44.

[12] Rovitto, M., Zisser, W. H., and Ceric, H. Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs. In Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (2015), p. P7-1.

[13] Rovitto, M., Zisser, W. H., Ceric, H., and Grasser, K.-T. Electromigration Modelling of Void Nucleation in Open Cu-TSVs. In Proceedings of the IEEE 16th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (2015), pp. 1-5.

[14] Zisser, W. H., Ceric, H., Lacerda de Orio, R., and Selberherr, S. Electromigration Analyses of Open TSVs. In Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2013), pp. 244-247.

[15] Zisser, W. H., Ceric, H., Lacerda de Orio, R., and Selberherr, S. Electromigration Induced Stress in Open TSVs. In 2013 IEEE International Integrated Reliability Workshop Final Report (2013), pp. 142-145.

[16] Zisser, W. H., Ceric, H., and Selberherr, S. Stress Development and Void Evolution in Open TSVs. In Abstracts of the GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects (2014), pp. 38-39.

[17] Zisser, W. H., Ceric, H., and Selberherr, S. Void Evolution in Open TSVs. In Abstracts of the 13th International Workshop on Stress-Induced Phenomena in Microelectronics (2014), p. 58.

[18] Zisser, W. H., Ceric, H., Weinbub, J., and Selberherr, S. Electromigration Induced Resistance Increase in Open TSVs. In Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2014), pp. 249-252.

[19] Zisser, W. H., Ceric, H., Weinbub, J., and Selberherr, S. Electromigration Reliability of Open TSV Structures. Microelectronics Reliability 54, 9-10 (2014), 2133-2137.

[20] Zisser, W. H., Ceric, H., Weinbub, J., and Selberherr, S. Electromigration Reliability of Open TSV Structures. In Abstracts of the 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (2014), p. 48.

[21] Zisser, W. H., Ceric, H., Weinbub, J., and Selberherr, S. Electromigration Reliability of Open TSV Structures. In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (2014), pp. 317-320.