BFOM Baliga figure of merit.
BTI bias temperature instability.
C carbon.
CDF cumulative distribution function.
CP charge pumping.
CV capacitance-voltage.
CVD chemical vapor deposition.
DFT density functional theory.
EDMR electrically detected magnetic resonance.
erfc complimentary error function.
H hydrogen.
ID -VG transfer characteristic.
MOSCAP metal oxide semiconductor capacitor.
MOSFET metal oxide semiconductor field effect transistor.
N2 dinitrogen.
N2O nitrous oxide.
NBTI negative bias temperature instability.
NH3 ammonia.
NMP non-radiative multiphonon.
NO nitric oxide.
O oxygen.
PbC carbon dangling bond.
PBS positive bias stress.
PBTS positive bias temperature stress.
PDF probability density function.
PES adiabatic potential energy surface.
POA post oxidation anneal.
Si silicon.
SiC silicon carbide.
SiH4 silane.
SIMS secondary ion mass spectrometry.
SiO2 silicon dioxide.
SMU source-measurement unit.
SRH Shockley-Read-Hall.
TEOS Tetraethylorthosilicat.
VO oxygen vacancy.
VSi silicon vacancy.
WBG wide band gap.
vacuum permittivity
(8.854 187 817 × 10−14).
time constant for electron capture in SRH
theory.
time constant for electron emission in SRH
theory.
time constant for hole emission in SRH
theory.
transition time constant for each H hopping
event.
parameter of the log-normal
distribution.
capture cross section of electrons.
standard deviation of the normal
distribution.
capture cross section of holes.
relative permittivity of SiC (≈ 10).
relative permittivity of SiO2
(3.9).
thermal drift velocity of electrons.
thermal drift velocity of holes.
effective area.
effective gate area.
oxide capacitance.
density of interface traps.
activation energy.
breakdown field.
energy at the bottom of the conduction
band.
active charge pumping energy window.
upper emission boundary of the active
energy window.
lower emission boundary of the active
energy window.
Fermi energy.
band gap energy.
intrinsic Fermi energy.
oxide field.
trap energy.
energy at the top of the valence band.
frequency.
transconductance.
charge pumping current.
maximum charge pumping current.
drain current.
gate-drain current in gated diode
mode.
readout current.
Bolzmann constant
(8.617 332 478 × 10−5).
mobility.
effective density of states in the conduction
band.
intrinsic carrier density.
carrier density in the inversion channel.
number of oxide traps.
effective density of states in the valence
band.
number of pumped charges.
number of interface states.
number of trapped charges.
elementary charge
(1.602 176 565 35 × 10−19).
total trapped interface charge.
reference readout for voltage shift
calculation.
channel resistance.
readout for voltage shift calculation.
on-resistance.
capture cross section.
temperature.
fall time of the gate pulse.
time the sample is subjected to a high
thermal budget.
oxide thickness.
accumulation preconditioning time.
rise time of the gate pulse.
time extraction point for voltage shift
calculation.
recovery time.
stress time.
transition time constant.
voltage shift.
voltage shift.
initial voltage shift between varying
measurements.
capacitance voltage shift.
drain voltage.
flat band voltage shift.
charge pumping flat band voltage.
maximum flat band voltage shift.
gate voltage.
high level of the gate pulse.
low level of the gate pulse.
operation gate voltage.
recovery or readout voltage.
stress voltage.
voltage level at the end a voltage
sweep.
threshold voltage.
charge pumping threshold voltage.
threshold voltage extracted by the method
of Ghibaudo.
threshold voltage in gated diode mode.
subthreshold voltage: gate voltage at which
the drain current reaches 1 nA at a drain voltage of 100 mV.