About 40 % of the large-area MOSFETs showed step heights of
0.15 mV in
measurements,
30 % showed step heights of
0.5 mV and 10 %
showed step heights of
1 mV. Due to the challenging
experimental characterization of steps close to the resolution limit of the experimental setup, the bias dependence and the temperature dependence of only one RTN signal could be characterized. It was
observed that with increasing
,
decreases and
increases and both decrease with
increasing temperature. Such a behavior of the characteristic capture and emission times is comparable to the behavior of the characteristic times of single defects. However, due to a too small data set it could not be proved if
and
can be modeled with a four-state NMP model. Finally, a few thoughts on possible causes for such steps in
traces in large-area devices
were summarized. For example, not a single defect but a cluster of coupled defects might cause such steps. However, further analysis is required on this topic in order to give a proper explanation for possible causes.