Contents
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Abstract
Kurzfassung
1 The Transistor
1.1 The Transistor in Digital Circuits
1.2 Scaling Trend of MOSFETs and Challenges
1.3 Reliability
2 Degradation Mechanisms
2.1 Bias Temperature Instability
2.2 Hot-Carrier Degradation
2.3 Mixed NBTI/HC Conditions
3 Experimental Characterization
3.1 On-The-Fly (OTF) Measurements
3.2 Charge Pumping (CP)
3.3 Capacitance-Voltage Profiling (C-V)
3.4 Measure-Stress-Measure (MSM)
3.5 Extended Measure-Stress-Measure (eMSM)
3.6 Random Telegraph Noise (RTN) Analysis
3.7 Time-Dependent Defect Spectroscopy (TDDS)
3.8 Temperature Accelerated Measurements
3.9 Conclusions
4 Discrete Steps in Large-Area Devices
4.1 Probability to Measure Discrete Steps
4.2 Experimental Characterization
4.3 Conclusions
5 Impact of Mixed NBTI/HC Stress on MOSFET Characteristics
5.1 Large-Area pMOSFET Characteristics
5.2 Individual Defects
5.3 Volatile Oxide Defects
5.4 Conclusions
6 Conclusion and Outlook
A List of Symbols
A.1 Physical Constants
A.2 Physical Quantities
A.3 Acronyms
List of Figures
List of Tables
Bibliography
Boltzmann constant
elementary charge