In this section the models are described that define and distinguish the
relevant III-V materials used. Using a similar set of parameters AlGaAs/GaAs and InGaP/GaAs HBTs [207]
and in a simplified modeling approach pseudomorphic AlGaAs/InGaAs HEMTs have been simulated using MINIMOS-NT[50].
Special effort was made to obtain an extended and more complete set of parameters for a wide range of material compositions and new materials systems.
In the modeling concept applied the ternary materials are composed from their binary constituents using a second order interpolation.
Table 3.1 shows the naming convention of the ternary materials and the energetic order of the valleys in k-space as a function of material
composition.
For AlGa
N the investigations are restricted
so far to the situation of the
valley having a direct
band gap due to uncertainties in the band
structure [103,158], which is sufficient for all
technically relevant AlGaN/GaN HEMTs.