Professors

Erasmus Langer
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.,
Head of Institute
 Preface
Siegfried Selberherr
O.Univ.Prof. Dipl.-Ing. Dr.techn. Dr.h.c.
 Preface
Tibor Grasser
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
 Volatility as a Clue to the Chemical Nature of Oxide Defects
Hans Kosina
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
 Electronic Transport in Semiconductor Nanostrucutures
Hajdin Ceric
Assistant Prof. Dipl.-Ing. Dr.techn.
 Compact Modeling of Electromigration in 3D ICs
Viktor Sverdlov
Privatdoz. MSc PhD
 Spins in Silicon

Administration

Ewald Haslinger
Markus Kampl
BSc
Manfred Katterbauer
Dipl.-Ing. (FH)
Renate Winkler

Researchers

Oskar Baumgartner
Dipl.-Ing.
 Investigation of Quantum Transport in Nanoscaled GaN HEMTs
Johann Cervenka
Senior Scientist Dipl.-Ing. Dr.techn.
 A Deterministic Approach for the Wigner Equation
Raffaele Coppeta
MSc Dr.techn.
 Dislocation Modeling in GaN-Based Devices
Paul Ellinghaus
MSc
 Wigner Monte Carlo Simulation Moving Towards Applications
Al-Moatasem El-Sayed
MChem
Lado Filipovic
MSc Dr.techn.
 Influence of Equipment Variation on the Fabrication of TSVs
Lidija Filipovic
MSc
 Band-to-Band Tunneling in 3D Devices
Joydeep Ghosh
MSc
 Reduction of the Intersubband Spin Relaxation and Enhancement of the Spin Lifetime in Strained-SOI Films
Wolfgang Goes
Dipl.-Ing. Dr.techn.
Statistical Analysis of Defect Parameters
Alexander Grill
Dipl.-Ing.
 Threshold Voltage Drift in GaN-Based MIS-HEMTs
Yury Illarionov
MSc
 Investigation of BTI in Double-Gated Graphene FETs
Markus Jech
Dipl.-Ing.
Alexander Makarov
MSc Dr.techn.
 Structure Optimization of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs
Mahdi Moradinasab
MSc Dr.techn.
 Graphene Superlattice-Based Photodetectors
Andreas Morhammer
Dipl.-Ing.
 ViennaUtils - Code Unification and Dependency Simplification for Semiconductor Device
Mihail Nedjalkov
D.Sc.
 The Aharanov-Bohm Effect from a Phase Space Perspective
Santo Papaleo
MSc
 Study Delamination at the Bottom of TSVs
Mahdi Pourfath
MSc Dr.techn.
 Modeling Nanoscaled Transistors Based on Single Layer MoS2
Marco Rovitto
MSc
 Electromigration Reliability in Open TSVs
Florian Rudolf
Dipl.-Ing.
 Template-Based Mesh Generation and CAD-Based Mesh Healing for Semiconductor Device Simulation
Karl Rupp
MSc Dipl.-Ing. Dr.techn.
 Simulation of Semiconductor Devices on Modern Parallel Hardware
Gerhard Rzepa
Dipl.-Ing.
 Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs
Prateek Sharma
MSc
 Predictive and Efficient Modeling of HCD in LDMOS transistors
Zlatan Stanojevic
Dipl.-Ing.
Michael Thesberg
PhD
 NEGF Studies for Power Factor Optimization of Energy Filtering Thermoelectrics
Stanislav Tyaginov
MSc PhD
 On the Importance of Electron-Electron Scattering for HCD
Bianka Ullmann
Dipl.-Ing.
 Characterization of the Permanent Component of MOSFET Degradation Mechanisms
Michael Waltl
Dipl.-Ing.
 An Advanced Measurement Setup to Study Single Charge Trapping in Nano-Scale MOSFETs
Josef Weinbub
Dipl.-Ing. Dr.techn.
 Parallelizing the Semi-Ordered Fast Iterative Method
Yannick Wimmer
Dipl.-Ing.
A Possible Explanation for Defect Volatility in Amorphous Silicon Dioxide
Thomas Windbacher
Dipl.-Ing. Dr.techn.
 A Buffered Non-Volatile Magnetic Logic Gate Grid
Wolfhard Zisser
Dipl.-Ing.
Voiding in Open TSV Structures