[MWJ1] M. Waltl, A. Grill, G. Rzepa, W. Goes, J. Franco, B. Kaczer, J. Mitard, and T. Grasser. “Superior NBTI in high-k SiGe Transistors - Part I: Experimental”. In: IEEE Transactions on Electron Devices (2016). (submitted).
[MWJ2] M. Waltl, G. Rzepa, A. Grill, W. Goes, J. Franco, B. Kaczer, J. Mitard, and T. Grasser. “Superior NBTI in high-k SiGe Transistors - Part II: Theory”. In: IEEE Transactions on Electron Devices (2016). (submitted).
[MWJ3] Y. Illarionov, M. Waltl, G. Rzepa, J.-S. Kim, S. Kim, A. Dodabalapur, D. Akinwande, and T. Grasser. “Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors”. In: ACS Nano (2016). (submitted).
[MWJ4] R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, and T. Grasser. “Characterization of Interface Defects with Distributed Activation Energies in GaN-based MIS-HEMTs”. In: IEEE Transactions on Electron Devices (2016). (submitted).
[MWJ5] Y. Y. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Mueller, and T. Grasser. “The Role of Charge Trapping in MoS2 /SiO2 and MoS2 /hBN Field-Effect Transistors”. In: 2D Materials (2016), pp. 035004-1–035004-10.
[MWJ6] B. Kaczer, J. Franco, P. Weckx, P. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Goes, and T. Grasser. “The Defect Centric Perspective of Device and Circuit Reliabiliy - From Gate Oxide Defects to Circuits”. In: Solid-State Electronics (2016). (invited).
[MWJ7] Y. Y. Illarionov, M. Waltl, A. D. Smith, S. Vaziri, M. Ostling, M. C. Lemme, and T. Grasser. “Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors”. In: Japanese Journal of Applied Physics 55.4S (2016), 04EP03.
[MWJ8] T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, and B. Kaczer. “NBTI in Nanoscale MOSFETs – The Ultimate Modeling Benchmark”. In: IEEE Transactions on Electron Devices 61.11 (Nov. 2014), pp. 3586–3593.
[MWC1] G. Rzepa, M. Waltl, W. Goes, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, and T. Grasser. “Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFET”. In: IEEE Symposium on VLSI Technology and Circuits. 2016.
[MWC2] Y. Illarionov, R. Rzepa, M. Waltl, H. Pandey, M. Lemme, and T. Grasser. “A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs”. In: Device Research Conference (DRC). 2016.
[MWC3] Y. Illarionov, M. Waltl, J.-S. Kim, D. Akinwande, and T. Grasser. “Temperature-Dependent Hysteresis in Phosphorene FETs”. In: Graphene Week. 2016.
[MWC4] M. Waltl, A. Grill, G. Rzepa, W. Goes, J. Franco, B. Kaczer, J. Mitard, and T. Grasser. “Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2016.
[MWC5] Y. Illarionov, M. Waltl, M. Furchi, T. Mueller, and T. Grasser. “Reliability of Single–Layer MoS2 Field–Effect Transistors with SiO2 and hBN Gate Insulators”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2016.
[MWC6] T. Grasser, M. Waltl, G. Rzepa, W. Goes, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, and B. Kaczer. “The “Permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2016.
[MWC7] T. Grasser, M. Waltl, Y. Wimmer, W. Goes, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A. El-Sayed, A. Shluger, and B. Kaczer. “Gate-Sided Hydrogen Release as the Origin of “Permanent” NBTI Degradation: From Single Defects to Lifetimes”. In: Proceedings of the International Electron Devices Meeting (IEDM). 2015.
[MWC8] Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. “Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors”. In: Proceedings of the International Conferene on Solid State Devices and Materials (SSDM). 2015, pp. 650–651.
[MWC9] G. Rzepa, M. Waltl, W. Goes, B. Kaczer, and T. Grasser. “Microscopic Oxide Defects causing BTI, RTN, and SILC on high-k FinFETs”. In: Proceedings of the International Conferene on Simulation of Semiconductor Processes and Devices (SISPAD). 2015, pp. 144–147.
[MWC10] Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. “Interplay between Hot Carrier and Bias Stress Components in Single–Layer Double–Gated Graphene Field–Effect Transistors”. In: Proceedings of the European Solid-State Device Research Conference (ESSDERC). 2015, pp. 172–175.
[MWC11] B. Ullmann, M. Waltl, and T. Grasser. “Characterization of the Permanent Component of MOSFET Degradation Mechanisms”. In: Proc. of the Vienna Young Scientists Symposium (VSS). 2015.
[MWC12] T. Grasser, M. Waltl, W. Goes, A. El-Sayed, A. Shluger, and B. Kaczer. “On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2015.
[MWC13] Y. Y. Illarionov, M. Waltl, A. D. Smith, S. Vaziri, M. Ostling, T. Mueller, M. C. Lemme, and T. Grasser. “Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2015, XT.2.1–XT.2.6.
[MWC14] Y. Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. “Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors”. In: Abstracts Graphene. 2015.
[MWC15] Y. Y. Illarionov, M. Waltl, A. D. Smith, S. Vaziri, M. Ostling, M. C. Lemme, and T. Crasser. “Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors”. In: International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). 2015, pp. 81–84.
[MWC16] T. Grasser, W. Goes, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas’ev, A. Stesmans, A.-M. El-Sayed, and A. Shluger. “On the Microscopic Structure of Hole Traps in pMOSFETs”. In: Proceedings of the International Electron Devices Meeting (IEDM). 2014.
[MWC17] W. Goes, M. Waltl, Y. Wimmer, G. Rzepa, and T. Grasser. “Advanced Modeling of Charge Trapping: RTN, 1/f Noise, SILC, and BTI”. In: Proceedings of the International Conferene on Simulation of Semiconductor Processes and Devices (SISPAD). (invited). 2014, pp. 77–80.
[MWC18] T. Grasser, K. Rott, H. Reisinger, M. Waltl, and W. Goes. “Evidence for Defect Pairs in SiON pMOSFETs”. In: Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA). 2014, pp. 258–263.
[MWC19] T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, and B.Kaczer. “A Unified Perspective of RTN and BTI”. In: Proceedings of the International Reliability Physics Symposium (IRPS). (best paper). 2014.
[MWC20] M. Waltl, W. Goes, K. Rott, H. Reisinger, and T. Grasser. “A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2014, XT18.1–XT18.5.
[MWC21] T. Grasser, G. Rzepa, M. Waltl, W. Goes, K. Rott, G. Rott, H. Reisinger, J. Franco, and B. Kaczer. “Characterization and Modeling of Charge Trapping: From Single Defects to Devices”. In: Proceedings of the International Conference on IC Design Technology (ICIC). 2014, pp. 1–4.
[MWC22] T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Goes, G. Pobegen, and B. Kaczer. “Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI”. In: Proceedings of the International Electron Devices Meeting (IEDM). 2013.
[MWC23] T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Goes, and B. Kaczer. Recent Advances in Understanding Oxide Traps in pMOS Transistors. (invited). 2013.
[MWC24] J. Franco, B. Kaczer, M. Toledano-Luque, P. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, and T. Grasser. “Reduction of the BTI Time–Dependent Variability in Nanoscaled MOSFETs by Body Bias”. In: prirps. 2013, pp. 2D.3.1–2D.3.6.
[MWC25] T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Goes, F. Schanovsky, M. Waltl, M. Toledano-Luque, and B. “Advanced Characterization of Oxide Traps: The Dynamic Time–Dependent Defect Spectroscopy”. In: Proceedings of the International Reliability Physics Symposium (IRPS). 2013, pp. 2D.2.1–2D.2.7.
[MWC26] M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, and T. Grasser. “Advanced Data Analysis Algorithms for the Time–Dependent Defect Spectroscopy of NBTI”. In: Proceedings of the International Integrated Reliability Workshop (IIRW). 2012, pp. 74–79.