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8.3 Temperature Dependence

During extensive single trap investigations, the capture and emission times of single traps have been observed to change with device temperature. Their temperature dependence can be described using an Arrhenius’ Law and follow the relation

(8.6) \begin{equation} \tau _{\mathrm {c,e}}(T) = \nu \myexp ^{\frac {\qO \EA ^{\mathrm {c,e}}}{\kB T}} \end{equation}

with \( \kB \) the Boltzmann constant, \( \qO \) the elementary charge, \( T \) the absolute temperature, the attempt frequency \( \nu \), and the activation energy \( \EA ^{c,e} \) for charge capture and charge emission, respectively. Typical activation energies \( \EA \) are in the range of \( \SI {0.5}{\electronvolt } \) up to \( \SI {2}{\electronvolt } \) limited by the measurement resolution for both charge capture and emission of defects in SiON and high-k transistors [MWC25, MWC20, MWC4].

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