During extensive single trap investigations, the capture and emission times of single traps have been observed to change with device temperature. Their temperature dependence can be described using an Arrhenius’ Law and follow the relation
with the Boltzmann constant,
the elementary charge,
the absolute temperature, the attempt frequency
, and the activation energy
for charge capture and charge emission, respectively. Typical activation energies
are in the range of
up to
limited by the measurement resolution for both charge capture and emission of defects in SiON and high-k transistors [MWC25, MWC20, MWC4].