Professors

Tibor Grasser
Univ.Prof. Dipl.-Ing. Dr.techn., Head of Institute
 Preface
Siegfried Selberherr
O.Univ.Prof. Dipl.-Ing. Dr.techn. Dr.h.c.
 Preface
Hajdin Ceric
Associate Prof. Dipl.-Ing. Dr.techn.
 Electromigration-Induced Growth of Silicon Nanowires
Lado Filipovic
Associate Prof. Dr.techn.
 Physics-Informed Compact Modeling for Design-Technology Co-Optimization
Hans Kosina
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
 Numerical Modeling of Nanostructured Semiconductor Devices
Viktor Sverdlov
Privatdoz. MSc PhD
 Edge Modes Conductance in Narrow MoS2 Nanoribbons in a Topological Phase
Michael Waltl
Associate Prof. Dipl.-Ing. Dr.techn.
 Challenges for Electronic Circuits Made from Devices Based on 2D Materials
Josef Weinbub
Associate Prof. Dipl.-Ing. Dr.techn.
 Coherent Wigner Dynamics in a Tunable Barrier Quantum Dot

Administration

Petra Kamptner-Jonas
Manfred Katterbauer
Dipl.-Ing.(FH)
Marlene Mandl
Diana Pop
MA MSc
Markus Schloffer
Ing.
Florian Wimmer
Katharina Zeh
BA

Researchers

Mina Bahrami
MSc
 DFT Investigation of the Suitability of SrTiO3 Dielectrics for 2D Electronics
Balazs Bamer
MSc
Mario Bendra
Univ.Ass. Dipl.-Ing.
 A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping
Mauro Borghi
MSc
 Molecular Beam Epitaxy Growth of SrF2 on Ag (111)
Mate Capin
MSc
Johann Cervenka
Senior Scientist Dipl.-Ing. Dr.techn.
 Solving the Schrödinger-Poisson Equation on GPUs
Lukas Cvitkovich
Univ.Ass. Dipl.-Ing.
 Variability due to Interfacial Disorder in Si-based Spin Qubits
Mohammad Davoudi
MSc
 Exploring Bi2SeO5 as a Promising Gate Insulator for 2D Semiconductor-Based Field-Effect Transistors
Mohammad Dehghani
Dr.
Johannes Ender
Univ.Ass. MSc
 Improving the Energy Efficiency of SOT-Assisted STT-MRAM with Reinforcement Learning
Clemens Etl
Dipl.-Ing.
 Monte Carlo Methods for Solving The Winger Equation in Linear Electromagnetic Fields
Ang Feng
PhD
 Revealing Trap Parameters in Luminescent Materials
Josef Gull
Dipl.-Ing.
 Electron-Electron Scattering in Semiconductors
Tomas Hadamek
MSc
 Multi-Physics Modeling of SOT-MRAM – Investigation of Thermal Effects
Zoltan Hajnal
PhD
Oliver Hartwig
MSc
Yoanlys Hernandez
D.Sc.
 Impact of Bias Temperature Instability on the Performance of SiC-based MOSFETs for High Power Electronics
Nils Petter Jorstad
MSc
 Modeling Spin-Orbit Effects in Magnetoresistive Devices
Alexander Karl
Dipl.-Ing.
 Comphy – A Compact Physics Framework for the Simulation of Reliability Issues in 2D Nanoelectronics.
Ananya Karmakar
MSc
Pedram Khakbaz
PhD
 DFT Investigation of Insulators for 2D Material Based Nanoelectronics
Theresia Knobloch
Dipl.-Ing. Dr.techn.
 Improved Stability of 2D Material-Based Transistors by Fermi-Level Tuning
Robert Kosik
Dipl.-Ing. Dr.techn.
 Exploring the Global Structure of the Solution Space for a Simple Schrödinger-Poisson Model
Sabine Leroch
Dipl.-Ing. Dr.
Paul Manstetten
Senior Scientist Dipl.-Ing.(FH) Dr.techn.
 Automatic Differentiation in Scientific Computing
Diego Milardovich
MSc
 Machine Learning-Based Molecular Dynamics Accelerated by Neuromorphic Hardware
Roberto Orio
Senior Scientist Dr.techn. MSc
 Impact of Voltage-Controlled Magnetic Anisotropy on Spin-Orbit Torque MRAM Switching
Alexandros Provias
MSc
Bernhard Pruckner
Dipl.-Ing.
Tobias Reiter
Dipl.-Ing.
 Modeling Plasma-Induced Damage During Dry Etching
Francio Rodrigues
MSc BSc
 Feature-Scale Modeling of Dry Etching in a Fluorocarbon Plasma
Seyedmahdi Sattari
PhD
 Fabrication of 2D-FET Devices with Emerging Gate Insulator Materials and Their Reliability Analysis
Igor Sokolovic
Dr.rer.nat. MSc
Bernhard Stampfer
Senior Scientist Dipl.-Ing. Dr.techn.
 Capacitance-Voltage Measurements using a Mercury Prober
Konstantinos Tselios
MSc
 Impact of Defects on the Threshold Voltage Drift in pMOS Transistors Employing SiO2
Aleksandr Vasilev
MSc
 Modeling the Hysteresis in the Current-Voltage Characteristics of Trench 4H-SiC MOSFETs
Dominic Waldhör
Dipl.-Ing. BSc
 Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study
Christoph Wilhelmer
Univ.Ass. Dipl.-Ing.
 Intrinsic Charge Trapping Sites in Amorphous Si3N4