Contents

• 1. Introduction
• 2. Strain Engineering
  • 2.1 Global Strain Techniques
  • 2.2 Local Strain Techniques
    • 2.2.1 Contact Etch Stop Liner Technique
    • 2.2.2 Stress Memorization
    • 2.2.3 Selective Epitaxial Growth Technique
    • 2.2.4 Stress from Shallow Trench Isolation
  • 2.3 Strain Technologies used in High Volume Production
    • 2.3.1 Hybrid Orientation Technology
  
  
• 3. Strain Effects on the Bulk Band Structure
  • 3.1 Strain
  • 3.2 Stress
  • 3.3 Stress-Strain Relations
    • 3.3.1 The Miller Index Notation
    • 3.3.2 Strain Resulting from Uniaxial Stress
    • 3.3.3 Strain Resulting from Epitaxy
  • 3.4 Basic Properties of the Diamond Structure
    • 3.4.1 Band Structure of Relaxed Si
  • 3.5 Effect of Strain on Crystals with Diamond Structure
    • 3.5.1 Hierarchy of systems
    • 3.5.2 symmetry
    • 3.5.3 symmetry
    • 3.5.4 symmetry
    • 3.5.5 symmetry
    • 3.5.6 symmetry
    • 3.5.7 symmetry
  • 3.6 Linear Deformation Potential Theory
    • 3.6.1 Strain-Induced Conduction Band Splitting
    • 3.6.2 Strain-Induced Lifting of Degeneracy at X point
    • 3.6.3 Strain-Induced Valence Band Splitting
  • 3.7 The kp method
    • 3.7.1 Effective Electron Mass in Unstrained Si
    • 3.7.2 Strain Effect on the Si Conduction Band Minimum
  • 3.8 Empirical Pseudopotential Theory for Arbitrary Strain
    • 3.8.1 The Empirical Pseudopotential Method
    • 3.8.2 Inclusion of Strain
  
  
• 4. Quantum Confinement and Subband Structure
  • 4.1 Electron Confinement at the Semiconductor-Oxide Interface
    • 4.1.1 The Si-SiO Interface
    • 4.1.2 Substrate Orientation (001)
    • 4.1.3 Substrate Orientation (110)
    • 4.1.4 Substrate Orientation (111)
  • 4.2 Strain Effects
    • 4.2.1 Substrate Orientation (001)
    • 4.2.2 Substrate Orientation (110)
    • 4.2.3 Substrate Orientation (111)
  
  
• 5. Physical Mobility Modeling
  • 5.1 Mobility
  • 5.2 Validity of the Boltzmann Transport Equation
  • 5.3 The Monte Carlo Method
    • 5.3.1 Bulk Scattering Mechanisms
    • 5.3.2 Scattering Mechanisms in the 2DEG
    • 5.3.3 Coupling to the Schrödinger Poisson Solver
  • 5.4 MC Algorithm Including Degeneracy Effects
  
  
• 6. Simulation Results
  • 6.1 Bandstructure Calculations
    • 6.1.1 Strain-Induced Shift of the Conduction Band Minimum
    • 6.1.2 Strain-Induced Change of the Shape of the Conduction Band Edge
    • 6.1.3 Subband Structure
  • 6.2 Bulk Electron Mobility of Strained Si
  • 6.3 Electron Inversion Layer Mobility of Strained Si
    • 6.3.1 Channel Mobility in UTB MOSFETs for (001) and (110) Substrates
    • 6.3.2 Degeneracy Effects on Inversion Layer Mobility
  
  
• 7. Summary and Conclusions
• Bibliography
• Own Publications

E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology