Contents

• List of Figures
• List of Tables
• 1. Introduction
  • 1.1 History of SiC
  • 1.2 SiC Semiconductor Crystal Growth
  • 1.3 SiC Physical and Electrical Properties
  • 1.4 SiC Device Applications and Benefits
  • 1.5 SiC Device Numerical Simulation
  • 1.6 Scope of the Dissertation
  
  
• 2. SiC Technology
  • 2.1 SiC Material Properties
    • 2.1.1 Crystallography
    • 2.1.2 Electrical Properties
  • 2.2 SiC Device Applications
    • 2.2.1 High Temperature Device Operation
    • 2.2.2 High Power Device Operation
    • 2.2.3 High Frequency Device Operation
    • 2.2.4 Optoelectronic Device Operation
  • 2.3 SiC Semiconductor Crystal Growth
    • 2.3.1 Historical Lack of Wafers
    • 2.3.2 Sublimation Growth of Wafers
    • 2.3.3 Epitaxy
  • 2.4 SiC Device Fundamentals
    • 2.4.1 Choice of Polytype for Devices
    • 2.4.2 Selective Doping- Ion Implantation
  • 2.5 SiC Contacts and Interconnect
    • 2.5.1 Ohmic Contacts
    • 2.5.2 Schottky Contacts
  • 2.6 SiC Patterned Etching
  • 2.7 SiC Insulators
  • 2.8 SiC Device Packaging
  
  
• 3. SiC Physical Modeling
  • 3.1 Electronic Transport Model
    • 3.1.1 Basic Semiconductor Equations
    • 3.1.2 Drift-Diffusion Current Equations
    • 3.1.3 Hydrodynamic Transport Equations
    • 3.1.4 Lattice Heat Flow Equation
    • 3.1.5 Quasi-Fermi Potential
    • 3.1.6 Metal-Semiconductor Contacts
    • 3.1.7 Insulator-Metal Contact
    • 3.1.8 Semiconductor-Insulator Interface
  • 3.2 Electronic Band Structure
    • 3.2.1 Bandgap-Energy
    • 3.2.2 Effective Masses and Intrinsic Carrier Density
    • 3.2.3 Bandgap Narrowing
  • 3.3 Carrier Mobility
    • 3.3.1 Low-Field Carrier Mobility
    • 3.3.2 Mobility Degradation due to Scattering
    • 3.3.3 High-Field Mobility and Velocity Saturation
  • 3.4 Dielectric and Thermal Properties
    • 3.4.1 Dielectric Permittivity
    • 3.4.2 Thermal Properties
  • 3.5 Generation and Recombination
    • 3.5.1 Shockley-Read-Hall Recombination
    • 3.5.2 Auger Recombination
    • 3.5.3 Impact Ionization
  • 3.6 Incomplete Ionization
  
  
• 4. SiC Device Simulation
  • 4.1 State-of-the-Art SiC Devices
  • 4.2 Device Design Considerations
  • 4.3 Simulation Considerations
  • 4.4 Rectifiers
    • 4.4.1 Schottky Barrier Diodes
    • 4.4.2 PiN Junction Diodes
    • 4.4.3 Merged PiN Schottky Diodes
  • 4.5 Unipolar Transistors
    • 4.5.1 UMOSFET
    • 4.5.2 DMOSFET
    • 4.5.3 ACCUFET
    • 4.5.4 MESFET
  
  
• 5. Summary and Conclusions
• A. Summary of Model Parameters
• B. Best Reported SiC Devices
• C. MESFET Operation
  • C.1 IV Characteristics
  • C.2 High-Frequency Performance
  
  
• Bibliography
• List of Publications

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation